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Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing | Nanoscale Research Letters | Full Text
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![Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing | Nanoscale Research Letters | Full Text Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing | Nanoscale Research Letters | Full Text](https://media.springernature.com/lw685/springer-static/image/art%3A10.1186%2Fs11671-022-03701-8/MediaObjects/11671_2022_3701_Fig3_HTML.png)
Medium-Temperature-Oxidized GeOx Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing | Nanoscale Research Letters | Full Text
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